Samsung and SAP open joint research center to improve in-memory computing

Samsung and SAP have inaugurated a joint research center in South Korea where the companies will conduct R&D on memory solutions to develop next-generation in-memory computing. In-memory computing is being developed by SAP to be used in servers for faster data processing and faster analyses of large amounts of data.

The president of Samsung’s memory business, Dr. Young-Hyun Jun, and Adaire Fox-Martin, President of SAP Asia Pacific Japan, were present at the inauguration ceremony. Both companies will push to improve in-memory computing using newer DRAM technologies, commercialize the technology, and offer it to customers. Engineers will test runs SAP’s HANA platform and also analysis performance of Samsung’s high-performance, high-density memory.

Currently, the server system in the joint research center uses a 24TB in-memory platform based on Samsung’s 128GB 3DS (three-dimensional stacked) DRAM modules built using 20nm technology. However, Samsung will soon start using 10nm 256GB DRAM modules in the setup to further improve power efficiency and performance. SAP HANA is an in-memory, column-oriented, relational database management system that is developed and marketed by SAP.